sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:Transistors
Brand:INFINEON
Particular Year:24+
Package:PG-TTFN-9
Delivery Date:New and Original
Stock: 1000pcs
The power MOSFET IQDH88N06LM5CGATMA1 60V comes in a PQFN 5x6 mm2 Source-Down package. The part offers the industry's lowest RDS(ON) of 0.88 mΩ combined with outstanding thermal performance for easy power loss management.
Features
Cutting edge silicon technology OptiMOS™ 60 V with outstanding FOMs
Source-Down package with improved thermal performance and ultra-low parasitics
Source-Down package with maximized chip/package ratio
Source-Down package in Center-Gate footprint
Benefits
Minimized conduction losses
Reduced voltage overshoot
Increased maximum current capability
Fast switching
Less device paralleling required
Center-Gate footprint enables optimized parallelization
Very low RDS(on) on 5x6 mm² PCB real-estate
Improved thermal performance for easy thermal management
Lowest package parasitics for best switching performance
industry standard package
Potential Applications
SMPS
Server
Datacom
High performance computing
Telecom
Oring
Drives
Battery powered tools
Model
Brand
Package
Quantity
Describe
ST
TO-263
32000
N-channel 100 V, 9 mOhm typical, 110 A STripFET II power MOSFET, D2PAK package
ST
PowerFLAT 8x8
3000
N-channel 600 V, 175 mOhm typical value, 15 A MDmesh DM6 power MOSFET, PowerFLAT 8x8 HV package
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Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…
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