sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:Transistors
Brand:INFINEON
Particular Year:24+
Package:TO-247-4
Delivery Date:New and Original
Stock: 1000pcs
AIMZH120R120M1T - Automotive 1200V Silicon-carbide (SiC) Trench Power MOSFET Transistors in TO247-4L (thin leads)
Part Number: AIMZH120R120M1T
Package: TO-247-4
Type: MOSFET Transistors
Description: N-Channel 1200V 22A (Tc) 133W (Tc) Through Hole PG-TO247-4-11
Product Overviews
AIMZH120R120M1T - With Infineon’s performance optimized chip technology (Gen1p), the SiC Mosfet features best-in-class switching performance, robustness against parasitic turn-ons, as well as improved RDSon and Rth(j-c). High power density, superior efficiency, bi-directional charging capabilities and significant reductions in system costs making it an ideal choice for on-board charger and DCDC applications.
Summary of Features
Very low switching losses
Increased turn-on voltage VGS(on)= 20 V
Best in class switching energy
Lowest device capacitances
low Crss/Ciss ratio and high VGS(th) to avoid parasitic turn-on
Reduced total gate charge QGtot for lower driving power and losses
.XT die attach technology for best in class thermal performance
Sense pin for optimized switching performance
Suitable for HV creepage requirements
Thinner leads for reduced risk of solder bridges
Potential Applications
On-board charger
DC/DC converter
Auxiliary drives
Model
Brand
Package
Quantity
Describe
INFINEON
TO-220-3
3000
600V CoolMOS™ P7 Superjunction (SJ) MOSFET -- N-Channel Power MOSFET Transistor
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Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…
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