sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:Memory
Brand:INFINEON
Particular Year:24+
Package:24-VBGA
Delivery Date:New and Original
Stock: 2000pcs
S26KL128SDABHB023 is high-speed CMOS, MIRRORBIT™ NOR flash devices. The device have an 8-bit wide DDR data bus and use only word-wide address boundaries.
Features
Initial random access read latency: 5 to 16 clock cycles
Sequential burst transactions
Configurable burst characteristics
100-MHz clock rate (200 MBps) at 3.0VVcc
Hybrid option: one wrapped burst followed by linear burst
Wrapped or linear burst type selected in each transaction
Configurable output drive strength
Up to 333-MBps sustained read throughput
Low power modes
Active clock stop during read: 12 mA, no wake-up required
Model
Brand
Package
Quantity
Describe
Renesas
8-UDFN
2000
64Mbit, 2.7V Minimum SPI Serial Flash Memory with Dual I/O Support
Renesas
8-SOIC
2000
64Mbit, 2.7V Minimum SPI Serial Flash Memory with Dual I/O Support
Renesas
8-SOIC
2000
64Mbit, 2.7V Minimum SPI Serial Flash Memory with Dual I/O Support
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Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…
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