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The Infineon S25FL512SAGBHVB10 NOR Flash devices are VIO VCC 2.7V to 3.6V Flash non-volatile memory devices. The devices are based on 65nm MirrorBit technology. Designed on the Eclipse™ architecture with a 512-byte page programming buffer, the 512-Mb S25FL512SAGBHVB10 NOR allows users to program up to 256 words (512 bytes) in a single operation. As a result, the device is efficiently programmed and erased faster than previous-generation SPI programming or erasure algorithms. The device interfaces with the host system via SPI and supports traditional SPI single bit serial inputs and outputs. Optional two-bit (dual I/O or DIO) and four-bit (quad I/O or QIO) serial commands are available.The S25FL512SAGBHVB10 NOR supports SIO, DIO, and QIO double data rate read commands for the transfer address.

S25FL512SAGBHVB10 Product Attributes

Manufacturer: Infineon

Product Category: NOR Flash Memory

Mounting Style: SMD/SMT

Package / Case: BGA-24

Series: S25FL512S

Memory capacity: 512 Mbit

Supply voltage - min: 2.7 V

Supply voltage - max: 3.6 V

Active read current (max): 90 mA

Interface type: SPI

Maximum clock frequency: 133 MHz

Organisation: 64 M x 8

Data bus width: 8 bit

Timing type: Synchronous

Minimum operating temperature: - 40 C

Maximum operating temperature: + 105 C

Memory Type: NOR

Humidity Sensitivity: Yes

Product Type: NOR Flash

Speed: 133 MHz

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