sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:UJ4C075060L8SSR
Brand:Qorvo
Particular Year:24+
Package:MO-229-8
Delivery Date:New and Original
Stock: 2000pcs
UJ4C075060L8SSR is a 750V, 58mohm G4 SiC FET. It is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device.
Features
On Resistance RDS(on): 58 mohm (typ)
Operating temperature: 175C (max)
Excellent reverse recovery: Qrr = 70nC
Low body diode VFSD: 1.31V
Low gate charge: QG = 37.8nC
Threshold voltage VG(th): 4.8V (typ) allowing 0 to 15V drive
Low intrinsic capacitance
ESD protected: HBM class 2 and CDM class C3
TOLL package for faster switching, clean gate waveforms
Typical applications
Server and Telecom power supplies
Switch mode power supplies
DC-DC converter circuits
EV Charging Stations
PV Inverters
Model
Brand
Package
Quantity
Describe
Qorvo
MO-229-8
3000
750V, 5.0mOhm combined field effect transistor, SiC JFET w/ Si MOSFETs
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Headquartered in North Carolina, Qorvo brings together more than 30 years of design experience and employs nearly 8,000 people worldwide. Qorvo has two production bases in China, located in Beijing and Dezhou, Shandong Province. Qorvo(Beijing) was est…
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