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Service Telephone:86-755-83294757
Trade Name:Silicon Carbide (SIC) FETs
Brand:Qorvo
Particular Year:24+
Package:TO-247-4
Delivery Date:New and original
Stock: 3000pcs
The UG4SC075009K4S 750V 8.4mΩ combination FET integrates 750V SiC JFET and low-voltage Si MOSFETs in a single TO-247-4L package. The design enables a normally closed switch while benefiting from ultra-low on-resistance [RDS(on)] and the robustness of a normally open SiC JFET.
The Qorvo UG4SC combination FET is ideal for high energy switches in circuit protection. For switching mode power conversion, the device has separate access to JFET and MOSFETs, which enhances speed control and simplifies the parallel connection of multiple devices.
UG4SC075009K4S specifications:
Product: Combo FET
Technology: SiC
Vf - Forward voltage: 1.24V
Vgs - grid - source voltage: -20 V, + 25 V
Installation style: SMD/SMT
Package/housing: TO-247-4
Operating temperature: -55 °C to + 175°C
Series: UG4S
Trademark: Qorvo
Descent time: 40 ns
Id- Continuous drain current: 106 A
Product type: Discrete Semiconductor Modules
Rds On- drain-source on-resistance: 8.8 mOhms
Rise time: 25 ns
Subcategory: Discrete and Power Modules
Typical shutdown delay: 114 ns
Typical connection delay: 24 ns
Vds- drain-source breakdown voltage: 750 V
Vgs TH-gate source threshold voltage: 4.5V
Model
Brand
Package
Quantity
Describe
Qorvo
MO-229-8
3000
750V, 5.0mOhm combined field effect transistor, SiC JFET w/ Si MOSFETs
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Headquartered in North Carolina, Qorvo brings together more than 30 years of design experience and employs nearly 8,000 people worldwide. Qorvo has two production bases in China, located in Beijing and Dezhou, Shandong Province. Qorvo(Beijing) was est…
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