sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:Silicon Carbide (SIC) FETs
Brand:Qorvo
Particular Year:24+
Package:MO-229-8
Delivery Date:New and original
Stock: 3000pcs
The UG4SC075005L8S 750V 5mΩ combination FET integrates 750V SiC JFET and low-voltage Si MOSFETs in a single MO-229-8 package. The design enables a normally closed switch while benefiting from ultra-low on-resistance [RDS(on)] and the robustness of a normally open SiC JFET.
The Qorvo UG4SC combination FET is ideal for high energy switches in circuit protection. For switching mode power conversion, the device has separate access to JFET and MOSFETs, which enhances speed control and simplifies the parallel connection of multiple devices.
Features:
Single Digit RDS(on)
Normally closed function
Increase speed control
Improved parallel device operation (3+ FET)
Maximum operating temperature: +175°C
High pulse current capability
Excellent device robustness
Connect silver sintered bare pieces for excellent thermal resistance
Short-circuit rating
Applications:
Solid state/semiconductor circuit breakers
Solid state/semiconductor relays
Battery disconnect
Surge protection
Surge current control
High Power Switching Mode Converter (>25kW)
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Headquartered in North Carolina, Qorvo brings together more than 30 years of design experience and employs nearly 8,000 people worldwide. Qorvo has two production bases in China, located in Beijing and Dezhou, Shandong Province. Qorvo(Beijing) was est…
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