sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:Silicon Carbide (SiC) FET
Brand:Qorvo
Particular Year:24+
Package:TO-247-4
Delivery Date:New and Original
Stock: 2000pcs
UG4SC075011K4S "Combo-FET" integrates both a 750V SiC JFET and a Low Voltage Si MOSFET into a single TO-247-4L package. This innovative approach allows users to create circuitry that would enable a normally-off switch while leveraging the benefits of a normally-on SiC JFET. These benefits include ultra-low on-resistance (RDS(on)) to minimize conduction losses and the exceptional robustness characteristic of a simplified JFET device structure, making it capable of handling the high-energy switching required in circuit protection applications.
Feature of UG4SC075011K4S
Low RDS(on)
Normally-off capability
Improved speed control
Improved parallel device operation (3+ FETs)
Operating temperature: 175C (max)
High pulse current capability
Excellent device robustness
Silver-sintered die attach for excellent thermal resistance
Short circuit rated
Applications of UG4SC075011K4S
Solid State / Semiconductor Circuit Breaker
Solid State / Semiconductor Relay
Battery Disconnects
Surge Protection
Inrush Current Control
High power switch mode converters (>25kW)
Model
Brand
Package
Quantity
Describe
Qorvo
MO-229-8
3000
750V, 5.0mOhm combined field effect transistor, SiC JFET w/ Si MOSFETs
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Headquartered in North Carolina, Qorvo brings together more than 30 years of design experience and employs nearly 8,000 people worldwide. Qorvo has two production bases in China, located in Beijing and Dezhou, Shandong Province. Qorvo(Beijing) was est…
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