Welcome Here  Shenzhen Mingjiada Electronics Co., Ltd.

UF4SC120023B7S is a 1200V, 23mΩ G4 SiC FET Transistors. This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device.

UF4SC120023B7S - Available in the D2PAK-7L package, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads and any application requiring standard gate drive.

Key Features

On Resistance RDS(on): 23 mohm (typ)

Operating temperature: 175C (max)

Excellent reverse recovery: Qrr = 243nC

Low body diode VFSD: 1.2V

Low gate charge: QG = 37.8nC

Low intrinsic capacitance

ESD Protected: HBM Class 2

Typical Applications

EV Charging

PV Inverters

Switch mode power supplies

Power factor correction circuits

DC-DC converter circuits

Induction heating

• 1.Is the inventory and price seen on the platform accurate?

  A: all online goods on the shelves can be ordered online, but considering the large liquidity of spot inventory, it is not possible to achieve 100% accuracy at present. In case of any abnormality, you can contact our company online and give the corresponding solution.

• 2.Are all our products genuine?

  A: our self-supporting products are from cooperative domestic and foreign original factories or authorized agents, and the source can be traced to ensure the original and authentic products.

• 3.Can you provide the qualification certificate of the original factory or agent?

  A: at present, our self-employed brands TI，ST，ADI，NXP，LATTICE，CYPRESS，INFINEON，XILINX and other first-line brands. Other channels are the original factory and agency channels. If necessary, we can communicate and confirm according to the specific brand and model.

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• 6.Can the company issue an invoice?

  A: you can issue ordinary invoices for individual users or special VAT invoices for enterprise users.