sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:SCTWA40N12G24AG
Brand:ST
Particular Year:23+
Package:TO-247-4
Delivery Date:New and Original
Stock: 1000pcs
The SCTWA40N12G24AG Silicon Carbide power MOSFET device features ST's advanced and innovative second-generation SiC MOSFET technology. The device features very low on-resistance per unit area and excellent switching performance. The switching loss varies almost independently of the junction temperature.
Product Characteristics
Transistor Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1200 В
Current at 25°C - Continuous Drain (Id): 33A (Tc)
Supply Voltage (Max Rds On, Min Rds On): 18 Ω: 18 В
Switching Resistance (Max) at Different Id, Vgs: 105 mOhm @ 20A, 18V
Vgs(th) at different Id (max): 5V @ 1mA
Gate charge (Qg) at different Vgs (max): 63 nK @ 18V
Maximum voltage: +22V, -10V
Input capacitance (Ciss) at different Vds (max): 1230 pF @ 800 V
Power Dissipation (Max): 290 W (Tc): 290 W (Tc).
Operating Temperature: -55°C ~ 200°C (TJ)
Grade: Automotive Grade
Certification: AEC-Q101
Mounting Type: Through Hole
Scope of Supply: TO-247-4
Package/Housing: TO-247-4
Applications
● Main inverter (electric traction)
● DC/DC converters for electric/hybrid vehicles
● On-board chargers (OBC)
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The STMicroelectronics (ST) Group was established in 1987 by the merger of Italys SGS Microelectronics and Frances Thomson Semiconductor. In May 1998, SGS-THOMSON Microelectronics changed the company name to STMicroelectronics Limited. STMicroelectron…
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