sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:IPA95R450PFD7
Data Manual:IPA95R450PFD7.pdf
Brand:INFINEON
Particular Year:23+
Package:TO220-3
Delivery Date:New original
Stock: 1000pcs
IPA95R450PFD7 950V CoolMOS™ PFD7 SJ MOSFET uses Super Junction (SJ) technology. SJ technology is advanced, easy to use and offers best-in-class performance, making it ideal for lighting and industrial SMPS applications. PFDJ integrates ultrafast body diodes that can be used in resonant topologies with the lowest reverse recovery charge (Qrr). The product has excellent hard commutation robustness and can be used in resonant topologies. This device provides an additional safety margin for designs with higher bus voltages.
specification
FET type: N channel
Technology: MOSFET (Metal oxide)
Drain-source voltage (Vdss) : 950 V
Current at 25°C - Continuous Drain (Id) : 7.2A (Tc)
Drive voltage (Max Rds On, min Rds On) : 10V
On-resistance (Max.) at different ids and Vgs: 450 milliohm @ 7.2A, 10V
Vgs(th) (Max.) for different ids: 3.5V@360µA
Gate charge (Qg) at different Vgs (Max.) : 43 NC-@10 V
Vgs (Max.) : ±20V
Input capacitance (Ciss) at different Vds (Max.) : 1230 PF-@400 V
FET function: -
Power dissipation (Max) : 30W (Tc)
Operating temperature: -55°C ~ 150°C (TJ)
Installation type: Through hole
Supplier device package: PG-TO220-3-313
Package/housing: TO-220-3 complete package
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