sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:MGD3160AM535EKR2
Data Manual:MGD3160AM535EKR2.pdf
Brand:NXP
Particular Year:23+
Package:32-BSSOP
Delivery Date:New and Original
Stock: 1000pcs
The MGD3160AM535EKR2 is an advanced single-channel gate driver designed to drive the latest SiC and IGBT modules for xEV traction inverters, OBCs and DC-DC converters. Offering integrated galvanic isolation, programmable interface via SPI, and advanced programmable protections such as over-temperature, desaturation, and current-sense protection, the GD3160 is capable of driving SiC MOSFET and IGBT gates directly: its high gate current and programmable gate drive voltage features provide high performance switching, low dynamic on-resistance, and rail-to-rail gate voltage control.
Product Attributes
Output Configuration: Half Bridge
Application: DC-DC converter
Interface: PWM, SPI
Load Type: Inductive, Capacitive, Resistive
Technology: Power MOSFET, IGBT
On-resistance (typical): 500 mOhm LS, 500 mOhm HS
Current - Output/Channel: 15A
Current - Peak Output: 15A
Voltage - Supply: 4.5V ~ 40V
Voltage - Load: 4.5V ~ 40V
Operating Temperature: -40°C ~ 150°C (TJ)
Rating: Automotive Grade
Fault Protection: Over Temperature, Short Circuit
Mounting Type: Surface Mount
Qualification: AEC-Q100
Package/Housing: 32-BSSOP (0.295", 7.50mm wide)
Supplier Device Package: 32-SOIC
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