sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:A5G26H605W19NR3
Data Manual:A5G26H605W19NR3.pdf
Brand:NXP
Particular Year:23+
Package:OM−780−4S4S
Delivery Date:New and Original
Stock: 1000pcs
A5G26H605W19NR3 85 W Asymmetric Doherty RF Power GaN Transistors are designed for cellular base station applications requiring extremely wide instantaneous bandwidths. Frequency range is 2496 to 2690 MHz The device's characteristics and performance guarantees apply to parts that will not perform as guaranteed when used in applications outside of these frequencies.
Features
● High termination impedance for optimal broadband performance
● Advanced high-performance in-package Doherty
● Improved linearisation of error vector magnitude with next-generation signals
● Capable of withstanding extremely high output VSWR and broadband operating conditions
● Plastic package
Model
Brand
Package
Quantity
Describe
TI
VQFN-52
3000
650V 30mΩ GaN FET with integrated driver, protection and zero voltage detection
TI
VQFN-54
3000
600V 30mΩ GaN FETs with integrated driver, protection and zero voltage detection
Nexperia
CCPAK1212i
3000
Gallium nitride (GaN) FET Surface mount N-channel 650 V 58.5A (Tc) 250W (Tc) CCPAK1212i
Nexperia
CCPAK1212
3000
Gallium nitride (GaN) FET surface mount N-channel 650 V 60A (Tc) 300W (Tc) CCPAK1212
Nexperia
WLCSP-22
3000
Gallium nitride (GaN) FET Surface Mount N Channel 40 V 20A (Ta) 13W (Ta) 22-WLCSP (2.1x2.1)
Nexperia
VQFN-7
3000
Gallium nitride (GaN) FET Surface mount N-channel 150 V 100A (Ta) 65W (Ta) VQFN
TI
VQFN-38
3000
650V 170mΩ GaN FET with integrated driver, protection and current sensing
TI
54-VQFN
2000
600V 30mΩ GaN FET with integrated driver, protection and zero-voltage detection
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NXP Semiconductors was founded in 2006. Its predecessor was the semiconductor business unit of Philips, the Netherlands, which was established in 1953 and headquartered in Eindhoven, the Netherlands. NXP was listed on Nasdaq in 2010.In 2015, NXP acqui…
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