sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:A5G26H605W19NR3
Data Manual:A5G26H605W19NR3.pdf
Brand:NXP
Particular Year:23+
Package:OM−780−4S4S
Delivery Date:New and Original
Stock: 1000pcs
A5G26H605W19NR3 85 W Asymmetric Doherty RF Power GaN Transistors are designed for cellular base station applications requiring extremely wide instantaneous bandwidths. Frequency range is 2496 to 2690 MHz The device's characteristics and performance guarantees apply to parts that will not perform as guaranteed when used in applications outside of these frequencies.
Features
● High termination impedance for optimal broadband performance
● Advanced high-performance in-package Doherty
● Improved linearisation of error vector magnitude with next-generation signals
● Capable of withstanding extremely high output VSWR and broadband operating conditions
● Plastic package
Model
Brand
Package
Quantity
Describe
TI
54-VQFN
2000
600V 30mΩ GaN FET with integrated driver, protection and zero-voltage detection
TI
VQFN-17
2000
100V 4.4mΩ half-bridge GaN FET with integrated driver and protection
NXP
OM- 780- 4S4S
1000
2110-2200MHz, 85W Average, 48V Airfast® RF Power GaN Transistor
Nexperia
DFN8080-8
1000
650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package
Nexperia
DFN5060-5
1000
650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package
Nexperia
DFN5060-5
1000
650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package
Nexperia
FCLGA-3
1000
150 V, 7 mOhm Gallium Nitride (GaN) FET in 2.2 mm x 3.2 mm x 0.774 mm LGA Package
Nexperia
DFN8080-8
1000
650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package
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