sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:A5G21H605W19NR3
Data Manual:A5G21H605W19NR3.pdf
Brand:NXP
Particular Year:23+
Package:OM- 780- 4S4S
Delivery Date:New and Original
Stock: 1000pcs
The A5G21H605W19NR385W asymmetric Doherty GaN RF power transistor is designed for mobile base station applications operating at 2110 to 2200MHz frequencies and requiring wide instantaneous bandwidth. The characteristic parameters and performance of this part are suitable for applications operating in the 2110-2200MHz band. Performance cannot be guaranteed if the part is used in applications operating outside of this range.
Features
● High termination impedance to support excellent broadband performance
● Advanced high-performance internal package Doherty
● Linearisation error vector amplitude enhancement with next-generation signals
● Withstands very high output VSWR and wideband operating conditions
● Plastic package
● RoHS compliant
Model
Brand
Package
Quantity
Describe
TI
VQFN-52
3000
650V 30mΩ GaN FET with integrated driver, protection and zero voltage detection
TI
VQFN-54
3000
600V 30mΩ GaN FETs with integrated driver, protection and zero voltage detection
Nexperia
CCPAK1212i
3000
Gallium nitride (GaN) FET Surface mount N-channel 650 V 58.5A (Tc) 250W (Tc) CCPAK1212i
Nexperia
CCPAK1212
3000
Gallium nitride (GaN) FET surface mount N-channel 650 V 60A (Tc) 300W (Tc) CCPAK1212
Nexperia
WLCSP-22
3000
Gallium nitride (GaN) FET Surface Mount N Channel 40 V 20A (Ta) 13W (Ta) 22-WLCSP (2.1x2.1)
Nexperia
VQFN-7
3000
Gallium nitride (GaN) FET Surface mount N-channel 150 V 100A (Ta) 65W (Ta) VQFN
TI
VQFN-38
3000
650V 170mΩ GaN FET with integrated driver, protection and current sensing
TI
54-VQFN
2000
600V 30mΩ GaN FET with integrated driver, protection and zero-voltage detection
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