sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:FFSB0865B-F085
Data Manual:FFSB0865B-F085.PDF
Brand:ON
Particular Year:23+
Package:TO-263
Delivery Date:New and Original
Stock: 1000pcs
The FFSB0865B-F085 EliteSiC Schottky diode uses a completely new technology that offers superior switching performance and higher reliability compared to silicon. No reverse recovery current, temperature-independent switching characteristics and excellent thermal performance make silicon carbide the next generation of power semiconductors. System benefits include highest efficiency, faster operating frequency, higher power density, lower EMI, and lower system size and cost.
Specifications
Manufacturer: onsemi
Product Type: Schottky Diodes & Rectifiers
Mounting Style: SMD/SMT
Package / Case: D2PAK-2
Configuration: Single
Technology: SiC
If - Forward current: 8 A
Vrrm - Repeated reverse voltage: 650 V
Vf - Forward voltage: 1.39 V
Ifsm - Forward inrush current: 56 A
Ir - Reverse current: 500 nA
Min. operating temperature: - 55 C
Maximum operating temperature: + 175 C
Qualification: AEC-Q101
Pd-Power Dissipation: 73 W
Factory Pack Quantity: 800
Vr - Reverse voltage : 650 V
Unit weight: 2.240 g
Applications
Automotive HEV-EV car chargers
Automotive HEV-EV DC-DC converters
Model
Brand
Package
Quantity
Describe
Microchip
TO-247-3
3000
700V, 50A Silicon Carbide (SiC) Schottky Barrier Diode (SBD), TO-247-3
Microchip
TO-247-2
3000
700V, 50A Silicon Carbide (SiC) Schottky Barrier Diode (SBD), TO-247-2
Microchip
TO-247-2
3000
700V Silicon Carbide (SiC) Schottky Barrier Diodes (SBDs), TO-247-2
Microchip
TO-247-2
3000
700V, 24A Silicon Carbide (SiC) Schottky Barrier Diodes (SBDs), TO-247-2
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