sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:Silicon Carbide Diodes
Brand:INFINEON
Particular Year:24+
Package:PG-TO247-4
Delivery Date:New and Original
Stock: 2000pcs
IDYH10G200C5 CoolSiC™ Schottky diode 2000 V, 10 A generation 5 in a TO-247PLUS-4 HCC package enables higher efficiency and design simplification in high DC link systems up to 1500 VDC. The extended 14 mm creepage and 5.4 mm clearance distances of the new TO-247PLUS-4 HCC package offer extra safety in harsh environments.
The diode offers first-class thermal performance thanks to the .XT interconnection technology and is highly resistant to humidity. The diode is the perfect fit for the matching CoolSiC™ MOSFET 2000 V portfolio.
Features
VRRM = 2000 V
IF = 10 A
VF = 1.5 V
No reverse recovery current
No forward recovery
High surge current capability
Temperature independent switch behavior
Low forward voltage
Tight forward voltage distribution
Specified dv/dt ruggedness
.XT interconnection technology
Potential applications
String 3-phase inverter
EV Charging
Model
Brand
Package
Quantity
Describe
Microchip
TO-247-3
3000
700V, 50A Silicon Carbide (SiC) Schottky Barrier Diode (SBD), TO-247-3
Microchip
TO-247-2
3000
700V, 50A Silicon Carbide (SiC) Schottky Barrier Diode (SBD), TO-247-2
Microchip
TO-247-2
3000
700V Silicon Carbide (SiC) Schottky Barrier Diodes (SBDs), TO-247-2
Microchip
TO-247-2
3000
700V, 24A Silicon Carbide (SiC) Schottky Barrier Diodes (SBDs), TO-247-2
Microchip
TO-220-2
3000
700V, 10A Silicon Carbide (SiC) Schottky Barrier Diodes (SBDs), TO-220-2
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