sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:FFSB0665B-F085
Data Manual:FFSB0665B-F085.PDF
Brand:ON
Particular Year:23+
Package:TO-263
Delivery Date:New and Original
Stock: 1500pcs
The FFSB0665B-F085 EliteSiC Schottky diode uses a completely new technology that offers superior switching performance and higher reliability compared to silicon. No reverse recovery current, temperature-independent switching characteristics and excellent thermal performance make silicon carbide the next generation of power semiconductors. System benefits include highest efficiency, faster operating frequency, higher power density, lower EMI and lower system size and cost.
Features
Maximum connector temperature 175°C
Avalanche rating of 24.5 mJ
High inrush current capacity
Positive temperature coefficient
Easy to parallelise
No reverse recovery/no forward recovery
AEC-Q101 qualified
Applications
Automotive HEV-EV on-board chargers
Automotive HEV-EV DC-DC converters
Model
Brand
Package
Quantity
Describe
Microchip
TO-247-3
3000
700V, 50A Silicon Carbide (SiC) Schottky Barrier Diode (SBD), TO-247-3
Microchip
TO-247-2
3000
700V, 50A Silicon Carbide (SiC) Schottky Barrier Diode (SBD), TO-247-2
Microchip
TO-247-2
3000
700V Silicon Carbide (SiC) Schottky Barrier Diodes (SBDs), TO-247-2
Microchip
TO-247-2
3000
700V, 24A Silicon Carbide (SiC) Schottky Barrier Diodes (SBDs), TO-247-2
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