sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:IXXN110N65B4H1
Data Manual:IXXN110N65B4H1.PDF
Brand:IXYS
Particular Year:23+
Package:SOT-227B
Delivery Date:New and Original
Stock: 1000pcs
IXXN110N65B4H1 650V XPT™ high-speed trench IGBTs are designed to minimise conduction and switching losses, especially in hard switching applications. The high-speed trench IGBTs are optimised for different switching speed ranges up to 60kHz. Devices are also available co-packaged with IXYS ultra-high speed Sonic-FRD™ diodes. The devices in this product family have current ratings from 30A to 200A at +110°C high temperature.
Product Attributes
IGBT Type: PT
Configuration: Single
Voltage - Collector Breakdown (Max): 650 В
Current - Collector (Ic) (Max): 215 A 215 A
Power - Max: 750 W
Vce (conduction) at different Vge, Ic (max): 2.1 V at 15 V, 110 A
Current - collector cutoff (max): 50 µA
Input capacitance (Cies) at different Vce: 3.65 nF @ 25 V
Input: Standard
NTC thermistor: None
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package/case: SOT-227-4, miniBLOC
Scope of delivery: SOT-227B
Applications
● Battery chargers
● Lamp ballasts
● Motor drivers
● Power inverters
● Power factor correction (PFC) circuits
● Switch-mode power supplies
● Uninterruptible power supply (UPS)
● Welding machines
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IXYS is headquartered in Silicon Valley, USA. It was established in 1983. Main business: MOSFET, IGBT, Thyristor, SCR, rectifier bridge, diode, DCB block, power module, Hybrid, transistor, inverter, RF module and microcontrollers, etc.The business is…
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