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sales@hkmjd.com
sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:A2V07H525-04NR6
Data Manual:
A2V07H525-04NR6.pdf
Brand:NXP
Particular Year:23+
Package:OM-1230-4L
Delivery Date:New and Original
Stock: 1000pcs
A2V07H525-04NR6 120 W Asymmetric Doherty RF Power LDMOS Transistors are designed for cellular base station applications from 595 to 580 MHz.Frequency range 595 to 851 MHz.
Attributes
Technology: LDMOS
Frequency: 595 MHz ~ 851 MHz
Gain: 17.5 dB
Voltage - Test: 48 V
Current Rating (Amps): 10µA
Current - Test: 700 mA
Power - Output: 120W
Voltage - Rated: 105 V
Mounting Type: Surface Mount
Package/Housing: OM-1230-4L
Supplier Device Package: OM-1230-4L
Model
Brand
Package
Quantity
Describe
NXP
NI-1230-4S
1000
750 W Continuous Wave, 700-1300 MHz, 50 V LDMOS RF Power Transistor
NXP
OM- 780- 4S4S
1000
A5G18H610W19N 1805-1880MHz, 85W Average, 48V Airfast® RF Power GaN Transistor
NXP
ACP-1230S-4L2S
1000
1805-1880 MHz, 71 W Average, 28 V Airfast® LDMOS RF Power Transistor
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NXP Semiconductors was founded in 2006. Its predecessor was the semiconductor business unit of Philips, the Netherlands, which was established in 1953 and headquartered in Eindhoven, the Netherlands. NXP was listed on Nasdaq in 2010.In 2015, NXP acqui…
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