sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:IDW32G65C5B
Data Manual:IDW32G65C5B.pdf
Brand:INFINEON
Particular Year:23+
Package:TO-247-3
Delivery Date:New and Original
Stock: 1000pcs
IDW32G65C5B is CoolSiC™ generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
Product Features
Revolutionary semiconductor material - Silicon Carbide
Benchmark switching behavior
No reverse recovery/ No forward recovery
Temperature independent switching behavior
High surge current capability
Pb-free lead plating; RoHS compliant
Qualified according to JEDEC1) for target applications
Breakdown voltage tested at 35 mA2) 3)
Optimized for high temperature operation
Benefits
Higher safety margin against overvoltage and complements CoolMOS™ offer
Improved efficiency over all load conditions
Increased efficiency compared to Silicon Diode alternatives
Reduced EMI compared to snappier Silicon diode reverse recovery waveform
Highly stable switching performance
Reduced cooling requirements
Reduced risks of thermal runaway
RoHS compliant
Very high quality and high volume manufacturing capability
Potential Applications
Switch mode power supply
Power factor correction
Solar inverter
Uninterruptible power supply
Model
Brand
Package
Quantity
Describe
ON
TO-247-3
1000
Diode Array 1 Pair Common Cathode 1200 V 20A Through Hole TO-247-3
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Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…
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