sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:FFSP3065B-F085
Data Manual:FFSP3065B-F085.PDF
Brand:ON
Particular Year:23+
Package:TO-220-2
Delivery Date:New and Original
Stock: 1000pcs
FFSP3065B-F085 650V Silicon Carbide (SiC) Schottky diodes offer excellent switching performance and higher reliability than silicon devices. These SiC Schottky diodes have no reverse recovery current, temperature independent switching characteristics, and excellent thermal performance. The devices offer system benefits such as increased system efficiency, faster operating frequency, higher power density, lower EMI, reduced system size, and lower cost.
Product Characteristics
Technology: SiC (Silicon Carbide) Schottky Technology
Voltage - Constant Reverse (Vr) (max): 650 В
Current - average rectifier current (Io): 30 А
Forward voltage (Vf): 1.7 V at 30 A
Fast response: no recovery time > 500 mA (Io)
Reverse recovery time (trr): 0 ns.
Current at different Vr - reverse leakage: 40 µA @ 650 V
Capacitance at different Vr, F: 1280 pF @ 1 V, 100 kHz
Category: Automotive
Certification: AEC-Q101
Mounting type: Through-hole
Package/Housing: TO-220-2
Supplier Device Case: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Applications
● Automotive HEV-EV Vehicle Chargers
● Automotive HEV-EV DC-DC Converters
Model
Brand
Package
Quantity
Describe
ON
TO-247-3
1000
Diode Array 1 Pair Common Cathode 1200 V 20A Through Hole TO-247-3
INFINEON
TO-247-3
1000
Diode Array 1 Pair Common Cathode 650 V 16A (DC) Through Hole TO-247-3
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