sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:2ED2304S06F
Data Manual:2ED2304S06F.pdf
Brand:INFINEON
Particular Year:23+
Package:8-SOIC
Delivery Date:New original
Stock: 2000pcs
2ED2304S06F is a 650-V half-bridge gate driver. Its thin-film-SOI technology provides excellent ruggedness and noise immunity.
Feature
Infineon thin-film-SOI-technology
Fully operational to +650 V
Floating channel designed for bootstrap operation
Output source/sink current capability +0.36 A/-0.7 A
Integrated Ultra-fast, low RDS(ON) Bootstrap Diode
Tolerant to negative transient voltage up to -100 V(Pulse width is up 300 ns) given by SOI-technology
10 ns typ., 60 ns max. propagation delay matching
dV/dt immune ±50 V
Gate drive supply range from 10 V to 20 V
Undervoltage lockout for both channels
Integrated dead-time with interlocking function
3.3 V, 5 V and 15 V input logic compatible
RoHS compliant
Applications
Motor drives, General purpose inverters
Refrigeration compressors
Half-bridge and full-bridge converters in offline AC-DC power supplies for telecom and lighting
Model
Brand
Package
Quantity
Describe
INFINEON
DSO-16
2000
1200V single high-side gate driver IC with active Miller clamp, DESAT and short circuit clamping
INFINEON
DSO-24
2000
Three phase gate driver IC bare die with integrated bootstrap diode and over current protection
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Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…
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