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The ISO5452QDWRQ1 is a 5.7 kVRMS enhanced isolated gate driver for IGBTs and MOSFETs with separate outputs (OUTH and OUTL) and a pull current capability of 2.5A and a fill current capability of 5A. The input operates from a single power supply of 2.25V to 5.5V. Two complementary CMOS inputs control the output state of the gate driver and a short propagation time of 76ns ensures precise control of the output stage.

Features

- Suitable for automotive electronics applications

- With the following results in accordance with AEC-Q100:

- Device temperature level 1: -40°C to 125°C ambient operating temperature range

- Device Body Model (HBM) classification level 3A

- Device Charge Device Model (CDM) classification level C6

- Common mode transient immunity (CMTI) of 50kV/μs minimum, 100kV/μs typical (at VCM = 1500V)

- Separate output for 2.5A peak pull current and 5A peak fill current

- Short propagation delay: 76ns (typical), 110ns (maximum)

- 2A active Miller clamp

- Output short-circuit clamping

- Soft shutdown (STO) during short-circuit

- Fault alarm via FLT on detection of a desaturation fault and reset via RST

- Input and output undervoltage lockout (UVLO) with ready (RDY) pin indication

- Active output pull-down feature, default output low in case of low supply or input overhang

- 2.25V to 5.5V input supply voltage

- 15V to 30V output driver supply voltage

- Complementary metal oxide semiconductor (CMOS) compatible inputs

- Suppression of input pulses and transients shorter than 20ns

- Surge isolation voltage withstand up to 10000VPK "

Applications

- Isolated Insulated Gate Bipolar Transistors (IGBTs) and Metal Oxide semiconductor field effect transistor (MOSFET) drivers:

- Hybrid electric vehicle (HEV) and electric vehicle (EV) power modules

- Industrial motor control drives

- Industrial power supplies

- Solar inverters

- Induction heating

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