sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:1ED3830MU12M
Data Manual:1ED3830MU12M.pdf
Brand:INFINEON
Particular Year:23+
Package:16-BSSOP
Delivery Date:New and Original
Stock: 1000pcs
1ED3830MU12M is EiceDRIVER™ Enhanced 5.7 kV, 3 A single-channel highly flexible isolated gate driver with ±3 A typical sinking and sourcing peak output current in small space-saving DSO-16 fine pitch wide-body package with large creepage distance (>8 mm) for IGBTs, MOSFETs and SiC MOSFETs.
Product Features
650 V, 1200 V, 1700 V, 2300 V IGBTs, SiC, and Si MOSFETs
40 V absolute maximum output supply voltage
±3 A, ±6 A, and ±9 A typical sinking and sourcing peak output current
Separate source and sink outputs for hard switching or optional two-level turn-off and with active Miller clamp
I2C bus for parameter configuration and status register readout
Precise, adjustable, and temperature compensated VCEsat detection (DESAT) with fault output
Adjustable IGBT soft turn-off after desaturation detection
Operation at high ambient temperature up to 125 °C with over temperature shut down at 160 °C (±10 °C)
Tight IC-to-IC propagation delay matching (tPDD,max = 30 ns)
High common-mode transient immunity CMTI = 200 kV/µs
Small space-saving DSO-16 fine-pitch package with large creepage distance (>8 mm)
Potential applications
Industrial motor drives - compact, standard, premium, servo drives
Solar inverters
UPS systems
Welding
Commercial and agricultural vehicles (CAV)
Commercial air-conditioning (CAC)
High-voltage isolated DC-DC converters
Isolated switch mode power supplies (SMPS)
Model
Brand
Package
Quantity
Describe
BROADCOM
SO-16
2000
Automotive 2.5A Gate-Drive Optocoupler with Integrated IGBT Desat Overcurrent Sensing
BROADCOM
SO-16
2000
Automotive 2.5A MOSFET Gate Drive Optocoupler with Integrated Desat Over Current Sensing
BROADCOM
SO-16
2000
Automotive 2.5A Gate Drive Optocoupler with Integrated Flyback Controller
ST
24-SOIC
1000
Gate Driver Channel 24-SO Automotive Galvanically Isolated Single Gate Driver
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Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…
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