sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:FF4MR20KM1H
Data Manual:FF4MR20KM1H.pdf
Brand:INFINEON
Particular Year:23+
Package:Module
Delivery Date:New and Original
Stock: 0pcs
FF4MR20KM1H 62 mm CoolSiC™ MOSFET half-bridge module 2000 V, 3.5 mΩ G1 in the well known 62 mm case design and M1H chip technology. Pre-coated thermal interface material (TIM) is also available.
Product characteristics
Technology: Silicon Carbide (SiC)
Configuration: 2 N-channels
Technology: Silicon Carbide (SiC)
Drain-to-source voltage (Vdss): 2000 V (2 kV).
Continuous drain current (Id) at 25°C: 280A (Tc).
Switching resistance (max) at different Id, Vgs: 5.3 mOhm at 300A, 18V
Vgs(th) at different Id (max): 5.15V @ 168mA
Gate Charge (Qg) at Vgs max: 1170nC @ 18V
Input Capacitance (Ciss) at Vds max: 36100pF @ 1.2kV
Operating Temperature: -40°C ~ 175°C
Mounting Type: On Chassis
Packaging/Enclosure: Module
Power Supply Included: AG-62MMHB
Applications
● Energy storage systems
● Electric vehicle charging
● Photovoltaics
● Traction
● Uninterruptible Power Supplies (UPS)
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