sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:STPSC20065WY
Data Manual:STPSC20065WY.pdf
Brand:ST
Particular Year:23+
Package:DO-247-2
Delivery Date:New and Original
Stock: 1000pcs
STPSC20065WY is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating.
Product Attributes
Technology SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) 650 V
Current - Average Rectified (Io) 20A
Voltage - Forward (Vf) (Max) @ If 1.45 V @ 20 A
Speed No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 300 µA @ 650 V
Capacitance @ Vr, F 1250pF @ 0V, 1MHz
Mounting Type Through Hole
Package / Case DO-247-2 (Straight Leads)
Supplier Device Package DO-247
Operating Temperature - Junction -40°C ~ 175°C
Product Features
No reverse recovery charge in application current range
Switching behavior independent of temperature
Dedicated to PFC applications
High forward surge capability
ECOPACK®2 compliant component
PPAP capable
Operating Tj from -40 °C to 175 °C
Model
Brand
Package
Quantity
Describe
ON
TO-247-3
1000
Diode Array 1 Pair Common Cathode 1200 V 20A Through Hole TO-247-3
INFINEON
TO-247-3
1000
Diode Array 1 Pair Common Cathode 650 V 16A (DC) Through Hole TO-247-3
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