sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:IQDH45N04LM6CG
Data Manual:IQDH45N04LM6CG.pdf
Brand:INFINEON
Particular Year:23+
Package:TTFN-9
Delivery Date:New and Original
Stock: 1000pcs
The power MOSFET IQDH45N04LM6CG 40 V is available in a PQFN 5x6 mm2 drop-source package. The device features an ultra-low RDS(ON) of 0.45 mΩ and excellent thermal performance for easy power loss management. This enables higher system efficiency and power density for a variety of end-use applications such as intermediate bus conversion in battery-powered tools, SMPS, telecom power supplies, and high-performance computing such as hyperscale data centers and AI server farms.
Features
- N-channel, logarithmic level
- Extremely low on-resistance RDS(ON)
- Superior heat resistance
- Passes 100% aging test
- Lead-free plating; RoHS compliant
- Halogen-free, IEC 61249-2-21 compliant
IQDH45N04LM6CG Product Attributes
Product Category: MOSFET
Mounting Style: SMD/SMT
Package / Case: TTFN-9
Transistor Polarity: N-Channel
Vds-Drain-source breakdown voltage: 40 V
Id-Continuous drain current: 637 A
Rds On-drain on-resistance: 450 uOhms
Vgs - gate-source voltage: - 20 V, + 20 V
Vgs th - gate-source threshold voltage: 2.3 V
Qg-gate charge: 62 nC
Minimum operating temperature: - 55 C
Maximum operating temperature: + 175 C
Pd-Power dissipation: 333 W
Channel mode: Enhancement
Trademark: OptiMOS
Series: OptiMOS 6
Configuration: Dual
Downtime: 14 ns
Product Type: MOSFET
Rise Time: 6 ns
Factory Package Quantity: 5000
Sub Category: MOSFETs
Typical Off Delay Time: 49 ns
Typical Turn-On Delay Time: 9 ns
Model
Brand
Package
Quantity
Describe
INFINEON
PG-TO220-3
5000
CoolMOS® Power Transistor Through-Hole N-Channel 650 V 16 A (Tc) 34 W (Tc) PG-TO220-3-31
INFINEON
TO-220
3000
60V Single N-Channel StrongIRFET™ Power MOSFET in a TO-220 package
INFINEON
PG-TSDSON-8
5000
OptiMOS™3 Power Transistor N-Channel 150 V 21 A (Tc) 57 W (Tc) PG-TSDSON-8
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