sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:FFSH4065ADN-F155
Data Manual:FFSH4065ADN-F155.PDF
Brand:ON
Particular Year:23+
Package:TO-247-3
Delivery Date:New and Original
Stock: 1000pcs
FFSH4065ADN-F155 ONSEMI 650V Silicon Carbide (SiC) Schottky diodes offer excellent switching performance and higher reliability than silicon devices. These SiC Schottky diodes have no reverse recovery current, temperature-independent switching characteristics, and excellent thermal performance. The devices offer system benefits such as increased system efficiency, faster operating frequency, higher power density, lower EMI, reduced system size and lower cost.
Product Attributes
Diode Configuration: 1 pair of common cathodes
Technology: SiC (Silicon Carbide) Schottky
Voltage - DC reverse (Vr) (max): 650 V
Current - Average Rectification (Io) (per diode): 22A (DC)
Voltage - Forward (Vf) at Different If: 1.75 V @ 20 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current at varying Vr - Reverse Leakage: 200 µA @ 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Mounting Type: Through Hole
Package/Housing: TO-247-3
Supplier Device Package: TO-247-3
Applications
● General
● SMPS, solar inverter, UPS
● Power switching circuits
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