sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:R2A25110KSP
Data Manual:R2A25110KSP.pdf
Brand:Renesas
Particular Year:23+
Package:48-SSOP
Delivery Date:New original
Stock: 1000pcs
The R2A25110KSP intelligent power device is designed for IGBT gate drives in high voltage inverter applications. Miniature isolators with coreless transformer configurations are used for high-voltage isolated data transmission between the primary circuit (MCU side) and the secondary circuit (IGBT side).
Specifications
Drive configuration: high or low voltage side
Channel type: Synchronous
Number of drives: 2
Gate type: IGBT
Voltage - Supply: 4.5V, 12.5V
Logic voltage - VIL, VIH: 1.65V, 3.85V
Current - Peak output (input, pull out) : 10A, 10A
Input type: non-inverting
Rise/fall time (typical value) : -
Operating temperature: -40°C ~ 125°C (TA)
Mounting type: Surface mount type
Package/housing: 48-SSOP (0.240", 6.10mm wide)
Supplier device package: 48-SSOP
Application
The main inverter for EV/HEV in automotive applications
EV/HEV converters in automotive applications
Inverters and converters for industrial instruments
Model
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Quantity
Describe
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Three phase gate driver IC bare die with integrated bootstrap diode and over current protection
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Renesas Technology is one of the worlds top ten semiconductor chip suppliers, and has achieved the worlds highest market share in many fields such as mobile communications, automotive electronics, and PC/AV.Renesas Technology was formally established …
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