sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:IXFN90N170SK
Data Manual:IXFN90N170SK.pdf
Brand:IXYS
Particular Year:23+
Package:SOT-227B
Delivery Date:New and Original
Stock: 1000pcs
The IXFN90N170SK features high speed switching, low capacitance, and high blocking voltage, low RDS(on), easy paralleling, simple drive, anti-latch, true Kelvin source connection, isolation voltage of 3000 V~, industry standard form factor and RoHS compliant and epoxy compliant to UL 94V-0, aluminium nitride isolation of the base plate, and advanced power cycling.
Product Attributes
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain-Source Voltage (Vdss): 1700 V
Current at 25°C - Continuous Drain (Id): 90 A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 20V
On Resistance (Max) at Different Id, Vgs: 35 mOhm @ 100A, 20V
Vgs(th) at different Id (max): 4V @ 36mA
Gate Charge (Qg) (max) at varying Vgs: 376 nC @ 20 V
Vgs (max): +20V, -5V
Input capacitance (Ciss) at different Vds (max): 7340 pF @ 1000 V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SOT-227B
Package/Housing: SOT-227-4, miniBLOC
Applications
● Solar inverters
● High voltage DC/DC converters
● Motor drives
● Switch-mode power supplies
● Uninterruptible power supplies
● Battery chargers
● Induction heating
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IXYS is headquartered in Silicon Valley, USA. It was established in 1983. Main business: MOSFET, IGBT, Thyristor, SCR, rectifier bridge, diode, DCB block, power module, Hybrid, transistor, inverter, RF module and microcontrollers, etc.The business is…
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