sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:BUK7Y1R7-40HX
Data Manual:BUK7Y1R7-40HX.pdf
Brand:Nexperia
Particular Year:23+
Package:LFPAK56
Delivery Date:New original
Stock: 1000pcs
The BUK7Y1R7-40HX automotive industry standard N-channel MOSFET features the latest Trench 9 low resistance super junction technology in a rugged LFPAK56 package. The product is fully designed and certified to AEC-Q101 to deliver high performance and durability.
specification
FET type: N channel
Technology: MOSFET (Metal oxide)
Drain-source voltage (Vdss) : 40 V
Current at 25°C - Continuous drain (Id) : 120A (Ta)
Drive voltage (Max Rds On, min Rds On) : 10V
On-resistance (Max.) at different ids and Vgs: 1.7 milliohm @ 25A, 10V
Vgs(th) (Max.) : 3.6V@1mA for different ids
Gate charge (Qg) at different Vgs (Max.) : 96 NC-@10 V
Vgs (Max.) : +20V, -10V
Input capacitance (Ciss) at different Vds (Max.) : 6142 PF-@25 V
FET function: -
Power dissipation (Max.) : 294W (Tc)
Operating temperature: -55°C ~ 175°C (TJ)
Mounting type: Surface mount type
Supplier package: LFPAK56, Power-SO8
Package/housing: SC-100, SOT-669
Basic product number: BUK7Y1
Model
Brand
Package
Quantity
Describe
INFINEON
PG-TDSON-8
3000
40V, Automotive MOSFET Transistor - OptiMOS™ 7 Power Transistor
INFINEON
PG-TDSON-8
3000
40V, Automotive MOSFET Transistor - OptiMOS™ 7 Power Transistor
INFINEON
PG-TDSON-8
3000
40V, Automotive MOSFET Transistor - OptiMOS™ 7 Power Transistor
INFINEON
PG-HSOG-4
1680
100V, N-Ch, 1.6 mΩ max, Automotive MOSFET, mTOLG (8x8), OptiMOS™ 5
A: all online goods on the shelves can be ordered online, but considering the large liquidity of spot inventory, it is not possible to achieve 100% accuracy at present. In case of any abnormality, you can contact our company online and give the corresponding solution.
A: our self-supporting products are from cooperative domestic and foreign original factories or authorized agents, and the source can be traced to ensure the original and authentic products.
A: at present, our self-employed brands TI,ST,ADI,NXP,LATTICE,CYPRESS,INFINEON,XILINX and other first-line brands. Other channels are the original factory and agency channels. If necessary, we can communicate and confirm according to the specific brand and model.
A: You can inquire through the website, or by phone and email.
A: the delivery date is marked in most commodity information. You can estimate the delivery time of the commodity according to the delivery date. The specific arrival time depends on the warehouse where the commodity is located and the logistics mode you choose.
A: you can issue ordinary invoices for individual users or special VAT invoices for enterprise users.
Ansys Semiconductor (China) Co. Nexperia is a leading global manufacturer specialising in discrete devices, logic devices and MOSFET devices. The company became independent at the beginning of 2017.Nexperia places great emphasis on efficiency and prod…
PSC2065JJ
PSC2065JJ SiC Schottky Diodes for ultra high performance, low loss, high efficiency power conversion applications. The SiC Schottky diode encapsulated in a TO-263-2 through-hole power plastic package offers temperature independent capacitive turn-off,…PSC2065LQ
PSC2065LQ SiC Schottky Diodes for ultra high performance, low loss, high efficiency power conversion applications. The SiC Schottky diode encapsulated in a TO-247-2 through-hole power plastic package offers temperature independent capacitive turn-off,…GAN039-650NTBZ
The GAN039-650NTBZ is a 650V, 33 mΩ Gallium nitride (GaN) FET in a CCPAK1212i flip package with low inductance, low switching losses, and high reliability.Specifications of GAN039-650NTBZ:FET type: N channelTechnology: GaNFET (Gallium nitride)Drain-s…GAN039-650NBBHP
The GAN039-650NBBHP is a 650 V, 33 Mω gallium nitride (GaN) FET in a CCPAK1212 package. Using leadless bonding, the device optimizes heat dissipation and electrical performance and provides a common source common gate configuration without the need f…GANB4R8-040CBAZ
The GANB4R8-040CBAZ Bidirectional GaN FET is a 40V, 4.8mΩ bidirectional gallium nitride (GaN) high electron mobility transistor (HEMT). GANB4R8-040CBA is a normally closed emode FET with excellent performance.Features:Enhanced mode - Normally off pow…GANE3R9-150QBAZ
The GANE3R9-150QBAZ Gallium nitride (GaN) FET is a universal 150V, 3.9mΩ gallium nitride (GaN) FET. The GANE3R9-150QBA is a normally closed electronic mode device with excellent performance and very low on-resistance. The Nexperia GANE3R9-150QBA come…Contact Number:86-755-83294757
Enterprise QQ:1668527835/ 2850151598/ 2850151584/ 2850151585
Business Hours:9:00-18:00
E-mail:sales@hkmjd.com
Company Address:Room1239, Guoli building, Zhenzhong Road, Futian District, Shenzhen, Guangdong
CopyRight ©2022 Copyright belongs to Mingjiada Yue ICP Bei No. 05062024-12
Official QR Code
Links: