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The GAN041-650WSBQ Gallium Nitride (GaN) FET has a 650V drain-source voltage, 47.2A drain current rating, and a maximum resistance of 41mΩ. The GAN041, in the TO-247 package, is a normally closed device that combines high-voltage GaN HEMT H2 technology with low-voltage silicon MOSFET technology. The combination of these technologies provides excellent reliability and performance.

Product attribute

FET type: N channel

Technology: GaNFET (Common Source Common gate Gallium nitride FET)

Drain-source voltage (Vdss) : 650 V

Current at 25°C - Continuous drain (Id) : 47.2A

Drive voltage (Max Rds On, min Rds On) : 10V

On-resistance (Max.) at different ids and Vgs: 41 milliohm @ 32A, 10V

Vgs(th) (Max.) : 4.5V@1mA for different ids

Gate charge (Qg) at different Vgs (Max.) : 22 NC-@10 V

Vgs (Max.) : ±20V

Input capacitance (Ciss) for different Vds (Max.) : 1500 PF-@ 400 V

FET function: -

Power dissipation (Max) : 187W

Operating temperature: -55°C ~ 175°C (TJ)

Installation type: Through hole

Supplier device package: TO-247-3

Package/housing: TO-247-3

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