sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:IPD60R210PFD7S
Data Manual:IPD60R210PFD7S.pdf
Brand:INFINEON
Particular Year:23+
Package:TO-252
Delivery Date:New and Original
Stock: 15000pcs
The 600V CoolMOS™ PFD7 superjunction MOSFET (IPD60R210PFD7S) complements the CoolMOS™ 7 product for consumer applications.The IPD60R210PFD7S is available in a TO-252 DPAK package and features an RDS(on) value of 210mOhm and low switching losses. A fast body diode is integrated to ensure robustness. The fast body diode and Infineon's industry-leading SMD package reduce PCB space and thus the customer's bill of materials (BOM).
Feature Description
Very low FOM RDS(on) x Eoss
Integrated rugged fast body diode
ESD protection up to 2kV
Wide range of RDS(on) values
Excellent commutation ruggedness
Low EMI
Wide range of package combinations
Benefits
Minimal switching losses
Increased power density compared to the latest CoolMOS™ charger technology
Higher efficiency and better thermal performance than CoolMOS™ CE technology for low-power drive applications
Lower BOM costs and ease of manufacturing
Robustness and reliability
Ease of design fine-tuning by selecting the right components
Potential Applications
Consumer
High density chargers and adapters
USB PD
Refrigerators
Fans
Water Pumps
Model
Brand
Package
Quantity
Describe
ST
PowerFLAT 8x8
3000
N-channel 600 V, 175 mOhm typical value, 15 A MDmesh DM6 power MOSFET, PowerFLAT 8x8 HV package
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Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…
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