sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:IPL65R200CFD7
Data Manual:IPL65R200CFD7.pdf
Brand:INFINEON
Particular Year:23+
Package:VSON-4
Delivery Date:New and Original
Stock: 1000pcs
The Infineon 650 V CoolMOS™ CFD7 superjunction MOSFET IPL65R200CFD7 in the ThinPAK 8x8 package is especially suited for resonant topologies in industrial applications such as servers, telecom, solar energy, and EV charging stations, and offers a substantial improvement in efficiency compared to competing products.
Product Attributes
Manufacturer: Infineon
Product Category: MOSFETs
Technology: Si
Mounting Style: SMD/SMT
Package / Case: VSON-4
Transistor polarity: N-Channel
Number of channels: 1 Channel
Vds-Drain-source breakdown voltage: 650 V
Id-Continuous drain current: 14 A
Rds On-drain on-resistance: 200 mOhms
Vgs - gate-source voltage: - 20 V, + 20 V
Vgs th - gate-source threshold voltage: 4.5 V
Qg - gate charge: 23 nC
Minimum operating temperature: - 40 C
Maximum operating temperature: + 150 C
Pd-Power dissipation: 81 W
Channel mode: Enhancement
Configuration: Single
Downtime: 5 ns
Humidity Sensitivity: Yes
Rise Time: 6.5 ns
Transistor Type: 1 N-Channel
Typical Off Delay Time: 14 ns
Typical turn-on delay time: 70 ns
Potential Applications
Electric vehicle fast charging
Server power supplies
Solar system solutions
Telecom infrastructure
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Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…
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