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NTBG022N120M3S 1200V The M3S Series SiC (Silicon Carbide) MOSFETs are optimised for fast switching applications and offer a low drain-source on-resistance of 22mΩ.The M3S Series SiC MOSFETs offer optimum performance when driven by an 18V gate driver, but can also be used with a 15V gate driver. The devices use planar technology for reliable operation with the gate in negative gate voltage drive and turn-off spikes.

The ON Semiconductor NTBG022N120M3S 1200V M3S series SiC MOSFETs are available in a D2PAK-7L package with low common-source inductance.

Features

Optimised for fast switching applications

Low switching losses

Typical turn-on switching losses of 485µJ at 40A, 800V

18V for best performance; 15V for compatibility with IGBT driver circuits

100% avalanche tested

Higher power density

Improved tolerance to unexpected inrush voltage spikes or ringing

Applications

AC-DC conversion

DC-to-AC conversion

DC-DC conversion

Switch-mode power supplies (SMPS)

UPS

Electric Vehicle Chargers

Solar Inverters

Energy Storage Systems

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