sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:GAN190-650FBEZ
Data Manual:GAN190-650FBEZ.pdf
Brand:Nexperia
Particular Year:23+
Package:DFN5060-5
Delivery Date:New and Original
Stock: 1000pcs
The GAN190-650FBEZ is a general purpose 650 V, 190 mΩ gallium nitride (GaN) FET in a 5 mm x 6 mm DFN surface mount package. It is a normally-off electronic mode device with excellent performance.
Product Attributes
Manufacturer: Nexperia
Product Category: MOSFETs
Technology: GaN
Mounting Style: SMD/SMT
Package / Case: DFN5060-5
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds-Drain-source breakdown voltage: 650 V
Id-Continuous drain current: 11.5 A
Rds On-drain on-resistance: 190 mOhms
Vgs - gate-source voltage: - 7 V, + 7 V
Vgs th - gate-source threshold voltage: 2.5 V
Qg - gate charge: 2.8 nC
Minimum operating temperature: - 55 C
Maximum operating temperature: + 150 C
Pd-power dissipation: 125 W
Channel mode: Enhancement
Configuration: Single
Downtime: 4 ns
Humidity sensitivity: Yes
Rise Time: 4 ns
Transistor Type: 1 N-Channel
Typical Off Delay Time: 1.7 ns
Typical turn-on delay time: 1.4 ns
Applications
High power density and high efficiency power conversion
AC-DC converters, totem pole PFCs
DC-DC converters
Fast battery charging, mobile phones, laptops, tablets and USB Type-C chargers
Datacom and telecom (AC-DC and DC-DC) converters
Motor Drivers
Solar (Photovoltaic) Inverters
Class D audio amplifiers, TV PSUs and LED drivers
Model
Brand
Package
Quantity
Describe
TI
54-VQFN
2000
600V 30mΩ GaN FET with integrated driver, protection and zero-voltage detection
TI
VQFN-17
2000
100V 4.4mΩ half-bridge GaN FET with integrated driver and protection
NXP
OM−780−4S4S
1000
2496-2690MHz, 85W Average, 48V Airfast® RF Power GaN Transistor
NXP
OM- 780- 4S4S
1000
2110-2200MHz, 85W Average, 48V Airfast® RF Power GaN Transistor
Nexperia
DFN8080-8
1000
650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package
Nexperia
DFN5060-5
1000
650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package
Nexperia
FCLGA-3
1000
150 V, 7 mOhm Gallium Nitride (GaN) FET in 2.2 mm x 3.2 mm x 0.774 mm LGA Package
Nexperia
DFN8080-8
1000
650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package
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