sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:GAN3R2-100CBEAZ
Data Manual:GAN3R2-100CBEAZ.pdf
Brand:Nexperia
Particular Year:23+
Package:WLCSP-8
Delivery Date:New and Original
Stock: 1000pcs
The GAN3R2-100CBEAZ is a general purpose 100 V, 3.2 mΩ gallium nitride (GaN) FET in a 15-bump wafer level chip scale package (WLCSP). It is a normally-off electronic mode device with excellent performance.
Product Attributes
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain-Source Voltage (Vdss): 100 V
Current at 25°C - Continuous Drain (Id): 60A
Drive voltage (max. Rds On, min. Rds On): 5V
On-resistance (max) at different Id, Vgs: 3.2 mOhm @ 25A, 5V
Vgs(th) at different Id (max): 2.5V @ 9mA
Gate Charge (Qg) (Max) at Vgs: 12 nC @ 5 V
Vgs (max): +6V, -4V
Input capacitance (Ciss) at different Vds (max): 1000 pF @ 50 V
Power Dissipation (Max): 394W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-WLCSP (3.5x2.13)
Package/Housing: 8-XFBGA, WLCSP
Applications
High power density and high efficiency power conversion
AC-DC converter (secondary)
High frequency DC-DC converter in 48 V systems
Fast battery charging, mobile phones, laptops, tablets and USB Type-C chargers
Datacom and telecom (AC-DC and DC-DC) converters
Motor Drivers
LiDAR (non-automotive)
Class D Audio Amplifiers
Model
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Package
Quantity
Describe
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Nexperia
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TI
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NXP
OM−780−4S4S
1000
2496-2690MHz, 85W Average, 48V Airfast® RF Power GaN Transistor
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2110-2200MHz, 85W Average, 48V Airfast® RF Power GaN Transistor
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