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NVBG045N065SC1 650V Silicon Carbide (SiC) MOSFETs offer excellent switching performance and higher reliability compared to Silicon (Si) devices.The 650V SiC MOSFETs feature low on-resistance in a compact die size that ensures low capacitance and low gate charge. Benefits include high efficiency, fast operating frequency, high power density, low EMI and small system size.

Product Attributes

Product Category: MOSFETs

Technology: SiC

Mounting Style: SMD/SMT

Package / Case: D2PAK-7L

Transistor Polarity: N-Channel

Number of channels: 1 Channel

Vds-Drain-source breakdown voltage: 650 V

Id-Continuous drain current: 62 A

Rds On-drain on-resistance: 50 mOhms

Vgs - gate-source voltage: - 8 V, + 22 V

Vgs th - gate-source threshold voltage: 4.3 V

Qg - gate charge: 105 nC

Minimum operating temperature: - 55 C

Maximum operating temperature: + 175 C

Pd-power dissipation: 242 W

Channel mode: Enhancement

Configuration: Single

Fall time: 7 ns

Forward transconductance - min: 16 S

Rise Time: 14 ns

Transistor Type: 1 N-Channel

Typical Off Delay Time: 26 ns

Typical turn-on delay time: 13 ns

Typical Applications

Automotive on-board chargers

Automotive DC-DC converters for electric/hybrid vehicles

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  A: all online goods on the shelves can be ordered online, but considering the large liquidity of spot inventory, it is not possible to achieve 100% accuracy at present. In case of any abnormality, you can contact our company online and give the corresponding solution.

• 2.Are all our products genuine?

  A: our self-supporting products are from cooperative domestic and foreign original factories or authorized agents, and the source can be traced to ensure the original and authentic products.

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  A: at present, our self-employed brands TI，ST，ADI，NXP，LATTICE，CYPRESS，INFINEON，XILINX and other first-line brands. Other channels are the original factory and agency channels. If necessary, we can communicate and confirm according to the specific brand and model.

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• 6.Can the company issue an invoice?

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