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The ON Semiconductor NTBG1000N170M1 Silicon Carbide (SIC) MOSFET is a 1700V M1 planar MOSFET designed in planar technology with a typical drain-to-source on-resistance (RDS(ON)) of 960mΩ, an ultra-low gate charge of 14nC (typical), and a low effective output capacitance of 11pF (typical).

Product Attributes of the NTBG1000N170M1

Product Category: MOSFETs

Mounting Style: SMD/SMT

Package / Case: D2PAK-7L

Transistor Polarity: N-Channel

Number of channels: 1 Channel

Vds-Drain-source breakdown voltage: 1.7 kV

Id-Continuous drain current: 4.3 A

Rds On-drain on-resistance: 960 mOhms

Vgs - gate-source voltage: - 15 V, + 25 V

Vgs th - gate-source threshold voltage: 4.3 V

Qg - gate charge: 13.9 nC

Minimum operating temperature: - 55 C

Maximum operating temperature: + 175 C

Pd-power dissipation: 51 W

Channel mode: Enhancement

Configuration: Single

Downtime: 16 ns

Forward transconductance - min: 0.6 S

Rise Time: 6 ns

Typical turn-off delay time: 10 ns

Typical Turn-On Delay Time: 10 ns

Typical Applications

Solar Inverters

Electric vehicle charging stations

Power storage systems

SMPS (Switch Mode Power Supply)

UPS (Uninterruptible Power Supply)

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