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The STPSC20H12G-TR SiC diode is an ultra-high performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a low VF and a rated voltage of 1200 V.

Parameters

Technology SiC (Silicon Carbide) Schottky  

Voltage - DC reverse (Vr) (max) 1200 V  

Current - Average rectification (Io) 20 A  

Voltage - Forward (Vf) (max) @ if 1.5 V @ 20 A  

Speed No recovery time > 500mA (Io)  

Reverse recovery time (trr) 0 ns  

Current - Reverse leakage @ Vr 120 µA @ 1200 V  

Capacitance @ Vr, F 1650pF @ 0V, 1MHz  

Mounting Type Surface Mount  

Package/Housing TO-263-3, D²Pak (2-lead + solder tab), TO-263AB  

Supplier Device Package D²PAK  

Operating Temperature - Junction - 40°C ~ 175°C

Features

-No reverse recovery or negligible

-Temperature independent switching behaviour

-Powerful high voltage peripherals

-Operating temperature -40°C to 175°C

-Low VF

-ECOPACK® compliant components

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