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Product Description:1700V, 50A, SP1F three-phase bridge SiC diode module
Package:SP1FProduct Description:SiC MOSFET module 1200V 79A 310W Base Installation
Package:ModuleProduct Description:SiC MOSFET module 700V 349A (Tc) 966W (Tc) Base Installation
Package:ModuleProduct Description:Silicon Carbide (SiC) MOSFET through hole N channel 3300 V 104A (Tc) TO-247-4
Package:TO-247-4Product Description:Silicon Carbide (SiC) MOSFET Surface mount N channel 1200 V 12A (Tc) 92W (Tc) TO-263-7
Package:TO-263-7Product Description:Silicon Carbide (SiC) MOSFET Surface mount N channel 1200 V 43A (Tc) 268W (Tc) TO-263-7
Package:TO-263-7Product Description:Silicon Carbide (SiC) MOSFET surface mount N-channel 700 V 34A (Tc) 156W (Tc) TO-263-7
Package:TO-263-7Product Description:1200V Phase Leg SiC MOSFET Power Module
Package:SP1FProduct Description:1200V Full Bridge SiC MOSFET Module
Package:SP3FProduct Description:1700V Three Level Inverter SiC MOSFET Module
Package:SP3FProduct Description:1200V Three Level Inverter SiC MOSFET Module
Package:SP3FProduct Description:700V Phase Leg SiC MOSFET Power Module
Package:SP1FProduct Description:1200V, 50A Silicon Carbide (SiC) Schottky Barrier Diode, SOT-227-4, miniBLOC
Package:SOT-227-4Product Description:700V Full Bridge SiC MOSFET Module
Package:SP3FProduct Description:700V, 50A Silicon Carbide (SiC) Schottky Barrier Diode (SBD) Module, SOT-227-4
Package:SOT-227-4Product Description:700V Three Level Inverter SiC MOSFET Module
Package:SP3FContact Number:86-755-83294757
Enterprise QQ:1668527835/ 2850151598/ 2850151584/ 2850151585
Business Hours:9:00-18:00
E-mail:sales@hkmjd.com
Company Address:Room1239, Guoli building, Zhenzhong Road, Futian District, Shenzhen, Guangdong
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