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Shenzhen  Mingjiada Electronics Co., Ltd.

Service Telephone:86-755-83294757

Product Classification

AI Processor Chip

AI Accelerators

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Unit Price

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HAS350M12BM3

Product Description:Silicon carbide (SiC) module 1200V 350A base installation, 62mm, half bridge

Package:Module
10pcs
1000
1 +
10 +
25 +
50 +
>=100
HAS530M12BM3

Product Description:Silicon carbide (SiC) module 1200V 530A base installation, 62mm, half bridge

Package:Module
10pcs
1000
1 +
10 +
25 +
50 +
>=100
CHB011M12GM4

Product Description:1200 V, 11 mΩ, GM, T-type, industrial-grade silicon carbide (SiC) module

Package:Module
10pcs
1000
1 +
10 +
25 +
50 +
>=100
CAB004M12GM4

Product Description:1200 V, 4 mΩ, GM, half-bridge, industrial-grade silicon carbide (SiC) module

Package:Module
10pcs
1000
1 +
10 +
25 +
50 +
>=100
HAS310M17BM3

Product Description:1700V 310A Silicon Carbide Half-Bridge Module

Package:Module
10pcs
1000
1 +
10 +
25 +
50 +
>=100
CAB6R0A23GM4T

Product Description:2300V 6.0 mΩ Silicon Carbide Half-Bridge Module

Package:Module
10pcs
2000
1 +
10 +
25 +
50 +
>=100
CAB7R5A23GM4T

Product Description:2300V 7.5 mΩ Silicon Carbide Half-Bridge Module

Package:Module
10pcs
2000
1 +
10 +
25 +
50 +
>=100
CAB5R0A23GM4T

Product Description:2300V 5.0 mΩ Silicon Carbide Half-Bridge Module

Package:Module
10pcs
2000
1 +
10 +
25 +
50 +
>=100
C3M0280090J

Product Description:Silicon Carbide (SiC) MOSFET N channel 900 V 11A (Tc) 50W (Tc) TO-263-7

Package:TO-263-7
10pcs
3000
1 +
10 +
25 +
50 +
>=100
C3M0160120D

Product Description:Silicon Carbide (SiC) MOSFET through hole N channel 1200 V 17A (Tc) 97W (Tc) TO-247-3

Package:TO-247-3
10pcs
3000
1 +
10 +
25 +
50 +
>=100
C3M0350120J

Product Description:Silicon Carbide (SiC) MOSFET N channel 1200 V 7.2A (Tc) 40.8W (Tc) TO 263-7

Package:TO-263-7
10pcs
3000
1 +
10 +
25 +
50 +
>=100
C2M0080120D

Product Description:Silicon Carbide (SiC) MOSFET through hole N channel 1200 V 36A (Tc) 192W (Tc) TO-247-3

Package:TO-247-3
10pcs
3000
1 +
10 +
25 +
50 +
>=100
C2M0025120D

Product Description:Silicon Carbide (SiC) MOSFET through hole N channel 1200 V 90A (Tc) 463W (Tc) TO 247-3

Package:TO-247-3
10pcs
3000
1 +
10 +
25 +
50 +
>=100
C3M0016120K1

Product Description:Silicon Carbide (SiC) MOSFET through hole N channel 1200 V 115A (Tc) 556W (Tc) TO-247-4

Package:TO-247-4
10pcs
3000
1 +
10 +
25 +
50 +
>=100
C3M0040120K1

Product Description:Silicon Carbide (SiC) MOSFET through hole N channel 1200 V 66A (Tc) 326W (Tc) TO-247-4

Package:TO-247-4
10pcs
3000
1 +
10 +
25 +
50 +
>=100
C3M0040120D

Product Description:Silicon Carbide (SiC) MOSFET through hole N channel 1200 V 66A (Tc) 326W (Tc) TO-247-3

Package:TO-247-3
10pcs
3000
1 +
10 +
25 +
50 +
>=100
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Contact Number:86-755-83294757

Enterprise QQ:1668527835/ 2850151598/ 2850151584/ 2850151585

Business Hours:9:00-18:00

E-mail:sales@hkmjd.com

Company Address:Room1239, Guoli building, Zhenzhong Road, Futian District, Shenzhen, Guangdong

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