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Service Telephone:86-755-83294757
Trade Name:Silicon Carbide (SiC) MOSFET
Brand:Microchip
Particular Year:24+
Package:TO-247-4
Delivery Date:New and original
Stock: 3000pcs
The MSC025SMA330B4 is a 3300 V, 104A silicon carbide MOSFET in a 4-pin TO-247 package with low capacitance and low gate charge. Microchip SiC solutions focus on high performance to help maximize system efficiency and minimize system weight and size.
Specifications of MSC025SMA330B4:
FET type: N channel
Technology: SiCFET (Silicon carbide)
Drain-source voltage (Vdss) : 3300 V
Current at 25°C - Continuous Drain (Id) : 104A (Tc)
Drive voltage (Max Rds On, min Rds On) : 20V
On-resistance (Max.) at different ids and Vgs: 31 milliohm @ 40A, 20V
Vgs(th) (Max.) : 2.7V@7mA for different ids
Gate charge (Qg) at different Vgs (Max.) : 410 N@20 V
Vgs (Max) : +23V, -10V
Input capacitance (Ciss) at different Vds (Max.) : 8720 PF-@ 2640 V
FET function: -
Power dissipation (Max.) : -
Operating temperature: -55°C ~ 150°C (TJ)
Installation type: Through hole
Supplier device package: TO-247-4
Package/housing: TO-247-4
Basic product number: MSC025
Model
Brand
Package
Quantity
Describe
ON
TO-247-3
3000
650V, 25mohm, N-Channel - EliteSiC, Silicon Carbide (SiC) MOSFET Transistor
TOSHIBA
TO-247-4
4333
SiC MOSFET Through hole N channel 1200 V 20A (Tc) 107W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET Through hole N Channel 1200 V 36A (Tc) 170W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET Through hole N Channel 1200 V 40A (Tc) 182W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET Through hole N Channel 1200 V 100A (Tc) 431W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET through hole N Channel 650 V 100A (Tc) 342W (Tc) TO-247-4L (X)
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Microchip Technology Incorporated (Nasdaq: MCHP) Microchip Semiconductor is the worlds leading supplier of microcontrollers and analog semiconductors, providing low-risk product development, lower system totals for thousands of consumer products world…
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