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Shenzhen  Mingjiada Electronics Co., Ltd.

Service Telephone:86-755-83294757

Product Classification

AI Processor Chip

AI Accelerators

Brand:

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Model

Brand

Parameter Description

MOQ

Stock

Purchase Quantity

Unit Price

Operation

IMW65R007M2H

Product Description:CoolSiC™ MOSFET 650V Transistors

Package:TO-247-3
10pcs
2000
1 +
10 +
25 +
50 +
>=100
NVH4L050N170M1
ON

Product Description:1700V, 45A, 53mohm, Silicon Carbide (SiC) MOSFET Transistor, TO-247-4

Package:TO-247-4
10pcs
3000
1 +
10 +
25 +
50 +
>=100
NTBL032N065M3S
ON

Product Description:650V, 55A, Silicon Carbide (SiC) MOSFET Transistor, H-PSOF-8

Package:H-PSOF-8
10pcs
3000
1 +
10 +
25 +
50 +
>=100
UJ4C075018K4S
ON

Product Description:750V, 18mohm, Silicon Carbide (SiC) MOSFET Transistor, TO-247-4

Package:TO-220-3
10pcs
3000
1 +
10 +
25 +
50 +
>=100
UJ3C065030T3S
ON

Product Description:650V, 85A, Silicon Carbide (SiC) MOSFET Transistor, TO-220-3

Package:TO-220-3
10pcs
3000
1 +
10 +
25 +
50 +
>=100
DIW120SIC059-AQ

Product Description:1200V, 65A, SiC MOSFET Transistor, TO-247-4

Package:TO-247-4
10pcs
3000
1 +
10 +
25 +
50 +
>=100
DIF120SIC053-AQ

Product Description:1200V, 65A, SiC MOSFET Transistor, TO-247-4

Package:TO-247-4
10pcs
3000
1 +
10 +
25 +
50 +
>=100
UJ3C120150K3S
ON

Product Description:1200V, 150mohm, Silicon Carbide (SiC) MOSFET Transistor, TO-247-3

Package:TO-247-3
10pcs
3000
1 +
10 +
25 +
50 +
>=100
UJ3C065030K3S
ON

Product Description:650V, 27mohm, Silicon Carbide (SiC) MOSFET Transistor, TO-247-3

Package:TO-247-3
10pcs
3000
1 +
10 +
25 +
50 +
>=100
BSM600D12P4G103

Product Description:1200V, 567A, full SiC power module with built-in half-bridge trench MOS

Package:Module
10pcs
1000
1 +
10 +
25 +
50 +
>=100
HAS350M12BM3

Product Description:Silicon carbide (SiC) module 1200V 350A base installation, 62mm, half bridge

Package:Module
10pcs
1000
1 +
10 +
25 +
50 +
>=100
HAS530M12BM3

Product Description:Silicon carbide (SiC) module 1200V 530A base installation, 62mm, half bridge

Package:Module
10pcs
1000
1 +
10 +
25 +
50 +
>=100
CHB011M12GM4

Product Description:1200 V, 11 mΩ, GM, T-type, industrial-grade silicon carbide (SiC) module

Package:Module
10pcs
1000
1 +
10 +
25 +
50 +
>=100
CAB004M12GM4

Product Description:1200 V, 4 mΩ, GM, half-bridge, industrial-grade silicon carbide (SiC) module

Package:Module
10pcs
1000
1 +
10 +
25 +
50 +
>=100
NXH004P120M3F2PNG
ON

Product Description:4 mohm SiC M3 MOSFET, 1200 V, 2-PACK Half Bridge Topology, F2 Package with Si3N4 DBC

Package:PIM-36
10pcs
1000
1 +
10 +
25 +
50 +
>=100
NVH4L032N065M3S
ON

Product Description:Silicon Carbide (SiC) MOSFET – EliteSiC, 32 mohm, 650 V, M3S, TO-247-4L

Package:TO-247-4
10pcs
3000
1 +
10 +
25 +
50 +
>=100
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Contact Number:86-755-83294757

Enterprise QQ:1668527835/ 2850151598/ 2850151584/ 2850151585

Business Hours:9:00-18:00

E-mail:sales@hkmjd.com

Company Address:Room1239, Guoli building, Zhenzhong Road, Futian District, Shenzhen, Guangdong

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