sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:Silicon Carbide (SiC) MOSFET
Brand:Microchip
Particular Year:24+
Package:TO-263-7
Delivery Date:New and original
Stock: 3000pcs
The MSC080SMA120SDT is a 1200V, 43A silicon carbide MOSFET in a TO-263-7 package with low capacitance and low gate charge. Microchip SiC solutions focus on high performance to help maximize system efficiency and minimize system weight and size.
Specifications of MSC080SMA120SDT:
Channel mode: Enhancement
Configuration: Single
Descent time: 12 ns
Id- Continuous drain current: 43 A
Maximum operating temperature: + 175°C
Minimum operating temperature: -55 °C
Installation style: SMD/SMT
Number of channels: 1 Channel
Package/housing: TO-263-7
Pd- Power dissipation: 268 W
Product type: SiC MOSFETS
Qg- Grid charge: 64 nC
Rds On- drain-source on-resistance: 100 mOhms
Rise time: 10 ns
Factory packing quantity: 800
Subcategory: Transistors
Technology: SiC
Transistor polarity: N-Channel
Typical shutdown delay: 22 ns
Typical connection delay: 13 ns
Vds- drain-source breakdown voltage: 1.2kV
Vgs - grid - source voltage: -10 V, + 23 V
Vgs TH-gate source threshold voltage: 5 V
Model
Brand
Package
Quantity
Describe
ON
TO-247-4
3000
Silicon Carbide (SiC) MOSFET – EliteSiC, 32 mohm, 650 V, M3S, TO-247-4L
ST
HiP247-3
3000
1200 V Automotive grade Silicon Carbide Power MOSFET, 27 Mω, 56 A, HiP247
ON
TO-247-3
3000
Silicon Carbide (SiC) MOSFET-EliteSiC, 32 mohm, 650 V, M3S, TO-247-3L
ON
TO-247-4
3000
Silicon Carbide (SiC) MOSFET-EliteSiC, 32 mohm, 650 V, M3S, TO-247-4L
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Microchip Technology Incorporated (Nasdaq: MCHP) Microchip Semiconductor is the worlds leading supplier of microcontrollers and analog semiconductors, providing low-risk product development, lower system totals for thousands of consumer products world…
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