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Shenzhen  Mingjiada Electronics Co., Ltd.

Service Telephone:86-755-83294757

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AI Processor Chip

AI Accelerators

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FAM65CR51DZ2
ON

Product Description:IGBT module 2 independent 650 V 33 A 160 W through hole APMCD-B16

Package:12-SSIP
10pcs
1000
1 +
10 +
25 +
50 +
>=100
NXH50M65L4Q1SG
ON

Product Description:IGBT Module Trench field cutoff Full bridge 650 V 48 A 86 W Base mounting 56-PIM (93x47)

Package:56-PIM
10pcs
1000
1 +
10 +
25 +
50 +
>=100
NFAP0560L3TT
ON

Product Description:Power driver module IGBT triple Inverter 600 V 5 A 29-PowerSSIP module, 21 leads, form leads

Package:SIP29
10pcs
2000
1 +
10 +
25 +
50 +
>=100
NXH350N100H4Q2F2P1G
ON

Product Description:IGBT Module Trench type field cutoff three-phase inverter 1000 V 303 A 276 W Base Mount 42-PIM

Package:42-PIM
10pcs
1000
1 +
10 +
25 +
50 +
>=100
NXH35C120L2C2SG
ON

Product Description:IGBT module triple inverter with brake 1200 V 35 A 20 mW through hole 26-DIP

Package:26-DIP
10pcs
2000
1 +
10 +
25 +
50 +
>=100
NXH35C120L2C2ESG
ON

Product Description:IGBT module triple inverter with brake 1200 V 35 A 20 mW through hole 26-DIP

Package:26-DIP
10pcs
2000
1 +
10 +
25 +
50 +
>=100
NXH50C120L2C2ESG
ON

Product Description:IGBT module triple inverter with brake 1200 V 50 A 20 mW through hole 26-DIP

Package:26-DIP
10pcs
3000
1 +
10 +
25 +
50 +
>=100
NXH50C120L2C2ES1G
ON

Product Description:IGBT module triple inverter with brake 1200 V 50 A 20 mW through hole 26-DIP

Package:26-DIP
10pcs
2000
1 +
10 +
25 +
50 +
>=100
NXH25C120L2C2SG
ON

Product Description:IGBT module triple inverter with brake 1200 V 25 A 20 mW through hole 26-DIP

Package:26-DIP
10pcs
2000
1 +
10 +
25 +
50 +
>=100
NXH35C120L2C2S1G
ON

Product Description:IGBT module triple inverter with brake 1200 V 35 A 20 mW through hole 26-DIP

Package:26-DIP
10pcs
2000
1 +
10 +
25 +
50 +
>=100
NVMTS0D7N04CTXG
ON

Product Description:Power MOSFET, Single N-Channel, 40 V, 0.67 mOhms, 420 A

Package:DFNW-8
10pcs
2540
1 +
10 +
25 +
50 +
>=100
NTHL040N120SC1
ON

Product Description:Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, TO-247-3L

Package:TO-247-3
10pcs
1000
1 +
10 +
25 +
50 +
>=100
NTTFD4D0N04HLTWG
ON

Product Description:MOSFET - Array 40V 15A (Ta), 60A (Tc) 1.7W (Ta), 26W (Tc) Surface Mount 12-WQFN (3.3x3.3)

Package:WQFN-12
10pcs
1100
1 +
10 +
25 +
50 +
>=100
NTBG080N120SC1
ON

Product Description:Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK-7L

Package:D2PAK-7
10pcs
1000
1 +
10 +
25 +
50 +
>=100
NVH4L022N120M3S
ON

Product Description:Карбид кремния (SiC) MOSFET - EliteSiC, 22 мома, 1200 В, M3S, TO247-4L

Package:TO-247-4
10pcs
2000
1 +
10 +
25 +
50 +
>=100
NTBLS1D1N08H
ON

Product Description:MOSFET - Power, Single, N-Channel, TOLL, 80 V, 1.05 mΩ, 351 A

Package:8-HPSOF
10pcs
3200
1 +
10 +
25 +
50 +
>=100
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Contact Number:86-755-83294757

Enterprise QQ:1668527835/ 2850151598/ 2850151584/ 2850151585

Business Hours:9:00-18:00

E-mail:sales@hkmjd.com

Company Address:Room1239, Guoli building, Zhenzhong Road, Futian District, Shenzhen, Guangdong

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