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NXP RF Amplifier MMRF2010GNR1 RF LDMOS Integrated Power Amplifier

NXP RF Amplifier MMRF2010GNR1 RF LDMOS Integrated Power Amplifier

Source:our siteTime:2024-07-30Views:

NXP RF Amplifier MMRF2010GNR1 RF LDMOS Integrated Power AmplifierProduct DescriptionMMRF2010GNR1 is 2-stage RFICs designed for IFF transponder applications operating from 1030 to 1090 MHz. The devices is suitable for use in pulse applications such as …

NXP RF Amplifier MMRF2010GNR1 RF LDMOS Integrated Power Amplifier


Product Description

MMRF2010GNR1 is 2-stage RFICs designed for IFF transponder applications operating from 1030 to 1090 MHz. The devices is suitable for use in pulse applications such as IFF and secondary radar transponders.


Features

Characterized over 1030-1090 MHz

On-chip input (50 Ohm) and interstage matching

Single ended

Integrated ESD protection

Low thermal resistance

Integrated quiescent current temperature compensation with enable/disable function

RoHS Compliant


Applications

Driver PA for high power pulse applications

IFF and secondary radar


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