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Product Description:

The STMicroelectronics 650V HB series grooved gate Field Termination IGBT is developed using the advanced, patented grooved gate and field termination structure. These devices achieve the best compromise between conduction and switching losses, maximizing the efficiency of any frequency converter. With ST's advanced grotted gate and field termination high-speed technology, these IGBTs have the lowest degree of collector current break trailing and a very low saturation voltage (Vce(sat)) (typical values as low as 1.6V), minimizing power loss during switching and opening. In addition, Microcorrect's VCE(sat) temperature coefficient and very tight parameter distribution enable safer parallel work.

The HB2 series is an evolution of advanced proprietary grooved gate field cutoff structures. Due to better VCE(sat) behavior at low current values, the performance of the HB2 series is optimized in terms of conduction as well as in terms of reducing switching energy. Diodes for protection purposes only are packaged in reverse parallel with IGBTs. As a result, the product is designed to maximize the efficiency of a variety of rapid applications.

Mingjiada Electronics Supplies/Acquires STGWA30HP65FB2 Trench Gate Field Stop 650 V, High Speed HB2 Series IGBTs

Specifications

Technology: Si

Package/housing: TO-247-3

Installation style: Through Hole

Configuration: Single

Maximum collector-emitter voltage VCEO: 650 V

Collector-emitter saturation voltage: 1.65V

Maximum grid/emitter voltage: -20 V, 20 V

Continuous collector current at 25 C: 50 A

Pd- Power dissipation: 167 W

Minimum operating temperature: -55 °C

Maximum operating temperature: + 175°C

Package: Tube

Trademark: STMicroelectronics

Maximum continuous current Ic: 50 A

Grid-emitter leakage current: 250 nA

Product type: IGBT Transistors

Factory packing quantity: 600

Subcategory: IGBTs

Unit weight: 6.100g