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The IGW75N65H5 insulated gate bipolar transistor (IGBT) is a high-speed device designed with ultimate efficiency, suitable for applications with switching rates greater than 30kHz. This high-speed 5 IGBT adopts TRENCHSTOP™ 5 technology and integrates the RAPID 1 fast flexible reverse parallel diode. The IGW75N65H5 offers best-in-class efficiency in both hard-switching and resonant topologies and is a plug-and-play alternative to the previous generation of IGBTs. Typical applications include UPS, welded converters, solar cell row inverters and medium and high frequency switching frequency converters.

Technical parameters

The main technical parameters of IGW75N65H5 include:

Configuration: Single

The maximum collector-emitter voltage VCEO: 650 V

Collector-emitter saturation voltage: 1.65V

Maximum gate/emitter voltage: -20V, 20V

Continuous collector current at 25 C: 120 A

Pd- Power dissipation: 395 W

Minimum operating temperature: -40 ° C

Maximum operating temperature: + 175 ° C

Series: Trenchstop IGBT5

Package/Box: TO-247-3

Installation style: Through Hole

Gate-emitter leakage current: 100 nA

Product type: IGBT Transistors

Part number alias: IGW75N65H5 SP001257936

Unit weight: 6.100 g

Application field

The IGW75N65H5 is suitable for application scenarios that require high performance and high reliability, such as:

Household appliances ‌ : Due to its high efficiency and reliability, it is suitable for power conversion requirements in a variety of household appliances.

Industrial Control ‌ : In industrial control systems, the IGW75N65H5 's high efficiency and low loss characteristics make it an ideal choice.

Automotive electronics ‌ : Power conversion and control systems in automotive electronic systems such as electric and hybrid vehicles.

Characteristics and advantages

The features of IGW75N65H5 include:

650V breakdown voltage

Compared with Infineon's outstanding "HighSpeed 3" series in the industry

The coefficient of Q g decreased by 2.5 times

The switching loss coefficient is reduced by 2 times

V CE (sat) has decreased by 200mV

Low C OES/E OSS

Mild positive temperature coefficient VCE (sat)

The temperature stability of V f

The advantages of IGW75N65H5 include:

It has excellent efficiency, reduces junction temperature and casing temperature, thereby enhancing equipment reliability

The busbar voltage can be increased by 50V without affecting reliability

Higher power density design

Immediate inquiry: IGW75N65H5 inventory and product price can be inquired by visiting the official website of Mingjiada Electronics (www.hkmjd.com).