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Supply Memory IC (4Gb) IS43LD32128B-18BLI, IS43LD32128B-18BPLI Dynamic Random Access Memory

Supply Memory IC (4Gb) IS43LD32128B-18BLI, IS43LD32128B-18BPLI Dynamic Random Access Memory

Source:our siteTime:2023-12-06Views:

Mingjiada Corporation supply and acquisition Memory IC IS43LD32128B-18BLI, IS43LD32128B-18BPLI Dynamic Random Access Memory 4G, 1.2/1.8V, LPDDR2, 128Mx32, 533MHzSupply and demand model: IS43LD32128B-18BLI, IS43LD32128B-18BPLILot: NewPackage: 134-TFBGA…

Mingjiada Corporation supply and acquisition Memory IC IS43LD32128B-18BLI, IS43LD32128B-18BPLI Dynamic Random Access Memory 4G, 1.2/1.8V, LPDDR2, 128Mx32, 533MHz


Supply and demand model: IS43LD32128B-18BLI, IS43LD32128B-18BPLI

Lot: New

Package: 134-TFBGA, 168-VFBGA


Long-term high price cash recycling personal and factory inventory of electronic components, only recycling formal channel sources, such as agents, traders, terminal factories.


Product Description:

IS43LD32128B-18BLI, IS43LD32128B-18BPLI are 4Gbit CMOS LPDDR2 DRAMs.The device consists of eight 32-bit 16 megabyte word groups. This product uses a dual data rate architecture to achieve high speed operation. The dual data rate architecture is essentially a 4N prefetch architecture with an interface designed to transfer two data words per clock cycle on the I/O pins. It provides operation that is fully synchronised with the rising and falling edges of the clock. The data path is internally pipelined and 4n-bit prefetched to achieve very high bandwidth.


Product Attributes

Memory Type: Volatile  

Memory Format: DRAM  

Technology: SDRAM - Mobile LPDDR2-S4  

Memory Capacity: 4Gb  

Memory Organisation: 128M x 32  

Memory Interface: HSUL_12  

Clock frequency: 533 MHz  

Write cycle time - word, page: 15ns  

Access Time: 5.5 ns  

Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V  

Operating Temperature: -40°C ~ 85°C (TC)  

Mounting Type: Surface Mount 


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